31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate
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چکیده
منابع مشابه
31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate.
We report on evanescently coupled Ge waveguide photodetectors that are grown on top of Si rib waveguides. A Ge waveguide detector with a width of 7.4mum and length of 50 mum demonstrated an optical bandwidth of 31.3 GHz at -2V for 1550nm. In addition, a responsivity of 0.89 A/W at 1550 nm and dark current of 169 nA were measured from this detector at -2V. A higher responsivity of 1.16 A/W was a...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2007
ISSN: 1094-4087
DOI: 10.1364/oe.15.013965